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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon pnp power transistor 2SB649A description high collector current-i c =-1 .5a high collector-emitter breakdown voltage- : v (br)ceo =-160v(min) good linearity of h fe low saturation voltage complement to type 2sd669a applications power amplifier applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -180 v v ceo collector-emitter voltage -160 v v ebo emitter-base voltage -5 v i c collector current-continuous -1.5 a i cp collector current-pulse -3 a collector power dissipation @ t c =25 20 p c collector power dissipation @ t a =25 1 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon pnp power transistor 2SB649A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = -1ma ; i e = 0 -180 v v (br)ceo collector-emitter breakdown voltage i c = -10ma ; r be = -160 v v (br)ebo emitter-base breakdown vltage i e = -1ma ; i c =0 -5 v v ce(sat) collector-emitter saturation voltage i c = -500ma; i b = -50ma -1.0 v v be( on ) base-emitter on voltage i c = -150ma ; v ce = -5v -1.5 v i cbo collector cutoff current v cb = -160v; i e = 0 -10 a h fe-1 dc current gain i c = -150ma ; v ce = -5v 60 200 h fe-2 dc current gain i c =-500ma ; v ce = -5v 30 f t current-gain?bandwidth product i c = -150ma ; v ce = -5v 140 mhz c ob output capacitance i e = 0; v cb = -10v,f test = 1mhz 27 pf ? h fe-1 classifications b c 60-120 100-200 |
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